Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

被引：93
|
作者：
Bell, C. [1 ,2 ]
Harashima, S. [1 ]
Hikita, Y. [1 ]
Hwang, H. Y. [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778651, Japan
[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期
关键词：
carrier mobility; electrical resistivity; electron gas; interface structure; lanthanum compounds; magnetoresistance; strontium compounds; OXIDES; STATE;
D O I：
10.1063/1.3149695
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.
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页数：3
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