Improved electrical and ferroelectric properties of multiferroic Na0.5Bi0.5TiO3/Bi1.07Nd0.03FeO3/Na0.5Bi0.5TiO3 sandwiched structure by a sol-gel process

被引：5
|
作者：
Shao, F. [1 ,2 ]
Miao, J. [1 ]
Wu, S. Z. [1 ]
Li, Z. H. [1 ]
Xu, X. G. [1 ]
Feng, P. [2 ]
Jiang, Y. [1 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Dept Phys, Beijing 100083, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 06期
关键词：
BIFEO3; FILMS; THIN-FILMS; BEHAVIOR;
D O I：
10.1007/s10854-014-1860-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A ferroelectric/multiferroic/ferroelectric sandwiched structure composed by Na0.5Bi0.5TiO3 (NBT) and Bi1.07Nd0.03FeO3 (BNF) with a LaNiO3 buffer layer were prepared by a sol-gel method. X-ray diffraction indicated the NBT/BNF/NBT films exhibited a pure perovskite structure. The average grain size of BNF and NBT/BNF/NBT were found to be 40 and 80 nm, respectively. Interestingly, the electrical and ferroelectric properties such as leakage current, dielectric constant, and remnant polarization of NBT/BNF/NBT sandwiched layer, were superior to those of BNF single film. However, the saturation magnetization of NBT/BNF/NBT sandwiched layer was reduced. Our work suggested the NBT/BNF/NBT sandwiched layer with improved multiferroic characteristics have a promising application for future information storage devices.
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收藏
页码：2411 / 2415
页数：5
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