Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition

被引：30

作者：

Choi, Joo-Young ^{[1
]}

Choi, Chang-Hak ^{[1
]}

Cho, Kyung-Hoon ^{[1
]}

Seong, Tae-Geun ^{[1
]}

Nahm, Sahn ^{[1
]}

Kang, Chong-Yun ^{[2
]}

Yoon, Seok-Jin ^{[2
]}

Kim, Jong-Hee ^{[3
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Inst Sci & Technol, Thin Film Res Ctr, Seoul 136791, South Korea

[3] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

ACTA MATERIALIA | 2009年 / 57卷 / 08期

关键词：

Laser deposition; Dielectrics; Thin films; MIM CAPACITORS; TITANATE; CERAMICS; POLARIZATION; TRANSISTORS; CONDUCTION; SUBSTRATE; INSULATOR; SYSTEMS;

D O I：

10.1016/j.actamat.2009.01.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An amorphous Bi4Ti3O12 Phase was formed when films were grown at <400 degrees C while Bi2Ti2O7 and Bi2Ti4O11 transient phases were developed when films were grown at 400-500 and 600 degrees C, respectively. A homogeneous Bi4Ti3O12 crystalline phase was formed in the film grown at 700 degrees C. The high leakage current density (5 x 10(7) A cm(-2) at 0.2 MV cm(-1)) of the film grown at 300 degrees C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 x 10(-8) A cm(-2) for the film grown at 200 mTorr OPP. due to the decreased number of intrinsic oxygen vacancies. However. when OPP exceeded 200 mTorr. the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the filius by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi4Ti3O12 film. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：2454 / 2460

页数：7

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