Recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells

被引：0
|
作者：
Brammer, T [1 ]
Stiebig, H [1 ]
机构：
[1] Forschungszentrum Julich, Inst Photovolta, D-52425 Julich, Germany
来源：
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Absorber layers of microcrystalline silicon thin-film solar cells deposited by plasma-enhanced chemical vapor deposition are characterized regarding the recombination lifetime. The characterization is based on a comparison of experimentally determined solar cell characteristics with results from numerical device simulations. Evaluation of the dark reverse saturation current indicates a strong dependence of tau on the hydrogen dilution during the deposition. Close to the transition region to amorphous growth where the highest solar cell efficiencies are observed tau is maximum within the crystalline deposition regime and equals 30 ns.
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页码：641 / 646
页数：6
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