Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing

被引：11

作者：

Kudo, Takashi ^{[1
]}

Kasama, Toshihiro ^{[1
]}

Ikeda, Takeshi ^{[1
,2
]}

Hata, Yumehiro ^{[2
]}

Tokonami, Shiho ^{[1
,2
]}

Yokoyama, Shin ^{[1
]}

Kikkawa, Takamaro ^{[1
]}

Sunami, Hideo ^{[1
]}

Ishikawa, Tomohiro ^{[1
]}

Suzuki, Masato ^{[1
]}

Okuyama, Kiyoshi ^{[1
]}

Tabei, Tetsuo ^{[1
]}

Ohkura, Kensaku ^{[1
]}

Kayaba, Yasuhisa ^{[1
]}

Tanushi, Yuichiro ^{[1
]}

Amemiya, Yoshiteru ^{[1
]}

Cho, Yoshinori ^{[1
]}

Monzen, Tomomi ^{[1
]}

Murakami, Yuji ^{[1
,2
]}

Kuroda, Akio ^{[1
,2
]}

Nakajima, Anri ^{[1
]}

机构：

[1] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Hiroshima 7398527, Japan

[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Mol Biotechnol, Hiroshima 7398530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 06期

关键词：

ELECTRICAL DETECTION; PROTEIN; NANOSENSORS; CHIP;

D O I：

10.1143/JJAP.48.06FJ04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) with a Si(3)N(4) gate insulator for highly sensitive detection of target biomolecules. The fabricated SiNW FET acted as an ion-sensitive FET that could detect the charge density in solutions flowing along the gate surface by responding to the pH of the solutions. The SiNW FET also detected charged protein molecules in solution, suggesting that our device can be used in highly sensitive, label-free biosensing. (C) 2009 The Japan Society of Applied Physics

引用

页码：06FJ041 / 06FJ044

页数：4

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