Silicon Carbide Power Transistors, Characterization for Smart Grid Applications

被引：0

作者：

Tiwari, S. ^{[1
]}

Undeland, T. ^{[2
]}

Basu, S. ^{[3
]}

Robbins, W. ^{[4
]}

机构：

[1] Wartsila, Trondheim, Norway

[2] Norwegian Univ Sci & Technol NTNU, Trondheim, Norway

[3] Bose Res PVT Ltd, Bangalore, Karnataka, India

[4] Univ Minnesota, Minneapolis, MN USA

来源：

2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC) | 2012年

关键词：

Double Pulse Test; Silicon Carbide Power Transistors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) has superior material properties appropriate for transistor applications at high frequency, high voltage, high power and high temperature. These properties give SiC transistors low conduction losses and fast switching capability. This paper addresses the dynamic characteristics of available SiC power transistors including JFETs, BJTs and MOSFETs which are quite promising for smart grid applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures, load conditions and configurations.

引用

页数：8

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