Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

被引:26
|
作者
Lee, Hae-Min [1 ]
Jeong, Gyoung Hwa [2 ]
Kim, Sang-Wools [3 ]
Kim, Chang-Koo [4 ,5 ]
机构
[1] Ajou Univ, Inst NT IT Fus Technol, 206 Worldcup Ro, Suwon 16499, South Korea
[2] UNIST, Dept Chem, Banyeon 100, Ulsan 44919, South Korea
[3] Ajou Univ, Dept Mol Sci & Technol, 206 Worldcup Ro, Suwon 16499, South Korea
[4] Ajou Univ, Dept Chem Engn, 206 Worldcup Ro, Suwon 16499, South Korea
[5] Ajou Univ, Dept Energy Syst Res, 206 Worldcup Ro, Suwon 16499, South Korea
基金
新加坡国家研究基金会;
关键词
Mesoporous vanadium nitrides; One-step chemical precipitation; Low temperature; Electrochemical capacitor; Specific capacitance; ELECTRODE MATERIALS; NANOCRYSTALLINE VN; MANGANESE-DIOXIDE; CARBON NANOTUBES; RUTHENIUM OXIDE; ENERGY DENSITY; SUPERCAPACITORS; MOLYBDENUM; PRECURSOR; ULTRACAPACITORS;
D O I
10.1016/j.apsusc.2016.12.190
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 degrees C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 Ng. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Omega and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:194 / 199
页数:6
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