Photoluminescence Flash Induced by Intense Single-Cycle Terahertz Pulses in Undoped GaAs Quantum Wells

被引：0
|
作者：
Shinokita, K. [1 ]
Hirori, H. [2 ,3 ]
Tanaka, K. [1 ,2 ,3 ]
Mochizuki, T. [3 ,4 ]
Kim, C. [3 ,4 ]
Akiyama, H. [3 ,4 ]
Pfeiffer, L. N. [5 ]
West, K. W. [5 ]
机构：
[1] Kyoto Univ, Dept Phys, Grad Sch Sci, Kyoto 6068502, Japan
[2] Kyoto Univ, Inst Integrated Cell Mat Sci WIP iCeMS, Kyoto 6068501, Japan
[3] JST CREST, Kyoto 6068501, Japan
[4] Kyoto Univ, Inst Solid State Phys, Kyoto 6068501, Japan
[5] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intense terahetz pulses induce a photoluminescence flashes from undoped GaAs/AlGaAs quantum wells under continuous wave laser excitation. This result indicates that the number of excitons increases 10000-fold from that of the steady state.
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页数：2
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