Systematics in the metal-insulator transition temperatures in vanadium oxides

被引:14
|
作者
Fisher, B. [1 ]
Genossar, J. [1 ]
Reisner, G. M. [1 ]
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
关键词
Metal-semiconductor; Electron-electron interactions; Electron-phonon interactions; Phase transitions; ELECTRICAL-CONDUCTIVITY; SINGLE-CRYSTALS; TRANSPORT; FEATURES; GROWTH; PHASE; V9O17;
D O I
10.1016/j.ssc.2015.10.015
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Nine of the known vanadium oxides, VO2-1/n (n - a positive or negative integer) with n=2-6,8,9, infinity and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures T-MIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force (s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in T-MIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if T-MIT is the absolute value of the difference between T-M(n) and T-P(n), which represent the contributions of electron-electron and electronphonon interactions, respectively, all data points of T-M-T-P versus 1/n lie on, or close to, two simple straight lines; one is T-M-T-P =T-infinity(7/n 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is T-M-T-P=T-infinity(3/n-1) for V2O3, V6O11 and VO2. (C) 2015 Elsevier Ltd. All rights reserved.
引用
下载
收藏
页码:29 / 32
页数:4
相关论文
共 50 条
  • [1] Metal-insulator phase transition in vanadium oxides films
    Golan, G
    Axelevitch, A
    Sigalov, B
    Gorenstein, B
    MICROELECTRONICS JOURNAL, 2003, 34 (04) : 255 - 258
  • [2] METAL-INSULATOR SYSTEMATICS IN RARE-EARTH TRANSITION-METAL OXIDES
    GREEDAN, JE
    CRANDLES, DA
    LIU, G
    REIMERS, JN
    XUE, JS
    REEDYK, M
    TIMUSK, T
    STAGER, CV
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1992, 203 : 699 - INOR
  • [3] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES
    RICE, TM
    MCWHAN, DB
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (03) : 251 - +
  • [4] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES
    HEINE, V
    MATTHEISS, LF
    JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (10): : L191 - +
  • [5] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES
    RICE, TM
    MCWHAN, DB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (02): : 155 - &
  • [6] On the metal-insulator transition in vanadium dioxide
    Fujita, Shigeji
    Jovaini, Azita
    Godoy, Salvador
    Suzuki, Akira
    PHYSICS LETTERS A, 2012, 376 (44) : 2808 - 2811
  • [7] METAL-INSULATOR TRANSITION IN VANADIUM DIOXIDE
    ZYLBERSZTEJN, A
    MOTT, NF
    PHYSICAL REVIEW B, 1975, 11 (11) : 4383 - 4395
  • [8] Mott metal-insulator transition in oxides
    Cyrot, M
    GAP SYMMETRY AND FLUCTUATIONS IN HIGH-T(C) SUPERCONDUCTORS, 1998, 371 : 73 - 89
  • [9] METAL-INSULATOR TRANSITION IN SELECTED OXIDES
    HONIG, JM
    VANZANDT, LL
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1975, 5 : 225 - 278
  • [10] Synthesis of vanadium dioxide thin films on conducting oxides and metal-insulator transition characteristics
    Cui, Yanjie
    Wang, Xinwei
    Zhou, You
    Gordon, Roy
    Ramanathan, Shriram
    JOURNAL OF CRYSTAL GROWTH, 2012, 338 (01) : 96 - 102