An organic multilevel non-volatile memory device based on multiple independent switching modes

被引：16

作者：

You, Yintao ^{[1
]}

Yang, Kunlong ^{[1
]}

Yuan, Sijian ^{[1
]}

Dong, Shiqi ^{[1
]}

Zhang, Huotian ^{[1
]}

Huang, Qinglan ^{[1
]}

Gillin, William P. ^{[1
,2
]}

Zhan, Yiqiang ^{[1
]}

Zheng, Lirong ^{[1
,3
]}

机构：

[1] Fudan Univ, SIST, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Queen Mary Univ London, Sch Phys & Astron, London E1 4NS, England

[3] Royal Inst Technol KTH, IPack VINN Excellence Ctr, S-16440 Stockholm, Sweden

来源：

ORGANIC ELECTRONICS | 2014年 / 15卷 / 09期

基金：

瑞典研究理事会; 国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Organic nonvolatile; Ferroelectric; Filament; Multilevel; MECHANISM; FILMS;

D O I：

10.1016/j.orgel.2014.05.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The demand for higher data density memory structures is greater today than ever before. Multilevel resistive organic memory devices (OMD) provide an ideal solution, in being easily fabricated, cost-effective and at the same time promising high storage capacity. However, conventional methods for multilevel OMDs impose demanding requirements on material properties and attain only limited performance. We hereby provide an alternative design concept that combines multiple switching modes in one device to realize multilevel function. The device possesses a simple structure by using a ferroelectric phase-separated blend as the active layer. Two switching modes, the ferroelectric switching and the metallic filament switching, are realized simultaneously in this device, and enable a ternary storage function. The cross-section scanning electron microscope (SEM) images provide a strong evidence of the formation and annihilation of the metallic filament. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1983 / 1989

页数：7

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