Low energy ion beam dynamics of NANOGAN ECR ion source

被引:3
|
作者
Kumar, Sarvesh [1 ]
Mandal, A. [1 ]
机构
[1] Inter Univ Accelerator Ctr, New Delhi, India
关键词
Beam optics; Emittance; ECR ion source; Analyzing magnet; EMITTANCE;
D O I
10.1016/j.nima.2016.01.029
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75, 90 and 105 using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:73 / 81
页数:9
相关论文
共 50 条
  • [1] ECR ion source based low energy ion beam facility
    Kumar, P
    Rodrigues, G
    Rao, UK
    Safvan, CP
    Kanjilal, D
    Roy, A
    PRAMANA-JOURNAL OF PHYSICS, 2002, 59 (05): : 805 - 809
  • [2] ECR ion source based low energy ion beam facility
    P Kumar
    G Rodrigues
    U K Rao
    C P Safvan
    D Kanjilal
    A Roy
    Pramana, 2002, 59 : 805 - 809
  • [3] A very low energy ion beam extraction system design of the GTS ECR ion source at GANIL
    Vybin, S. S.
    Izotov, I. V.
    Skalyga, V. A.
    Maunoury, L.
    Rousseau, P.
    Feierstein, C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2024, 1061
  • [4] Ion beam properties for ECR ion source injector systems
    Leitner, D.
    Winklehner, D.
    Strohmeier, M.
    JOURNAL OF INSTRUMENTATION, 2011, 6
  • [5] Experimental study on ion beam emittance of ECR ion source
    Sun, LT
    Cao, Y
    Feng, YC
    Li, JY
    Zhao, HW
    Zhang, ZM
    Wang, H
    Ma, BH
    He, W
    Zhao, HY
    Guo, XH
    HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 29 (12): : 1179 - 1184
  • [6] ECR Based Low Energy Ion Beam Facility at VECC, Kolkata
    Taki, G. S.
    Chakraborty, D. K.
    Ghosh, Subhash
    Majhi, S.
    Pal, Gautam
    Mallik, C.
    Bhandari, R. K.
    Krishna, J. B. M.
    Dey, K.
    Sinha, A. K.
    INTERNATIONAL SYMPOSIUM ON VACUUM SCIENCE AND TECHNOLOGY AND ITS APPLICATION FOR ACCELERATORS (IVS 2012), 2012, 390
  • [7] REACTION ION BEAM ETCHING USING A BROAD BEAM ECR ION SOURCE.
    MATSUO, SEITARO
    ADACHI, YOSHIO
    1982, V 21 (N 1): : 4 - 6
  • [8] An ECR ion source-based low-energy ion accelerator: development and performance
    Agnihotri, A. N.
    Kelkar, A. H.
    Kasthurirangan, S.
    Thulasiram, K. V.
    Desai, C. A.
    Fernandez, W. A.
    Tribedi, L. C.
    PHYSICA SCRIPTA, 2011, T144
  • [9] CHARACTERISTICS OF AN ECR ION-BEAM SOURCE FOR LOW-PRESSURE ETCHING
    NEUMANN, G
    SCHEER, HC
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04): : 2403 - 2405
  • [10] Simulation of ion beam extraction from an ECR source
    Spadtke, P.
    Tinschert, K.
    Ivens, D.
    1600, American Inst of Physics, Woodbury, NY, USA (65):