Radiation imaging with a new scintillator and a CMOS camera

被引:7
|
作者
Kurosawa, S. [1 ,2 ]
Shoji, Y. [1 ]
Pejchal, J. [1 ,3 ]
Yokota, Y. [2 ]
Yoshikawa, A. [1 ,2 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic
来源
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
Scintillators; scintillation and light emission processes (solid; gas and liquid scintillators); Image processing; LIGHT YIELD; RESOLUTION;
D O I
10.1088/1748-0221/9/07/C07015
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd-3(Al,Ga)(5)O-12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 +/- 0.4 mu m and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce: GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.
引用
收藏
页数:9
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