Study on Cu3N and Cu3AlN Thin Films Prepared by DC Magnetron Sputtering

被引：0

作者：

Zuo An-you ^{[1
]}

Yuan Zuo-bin ^{[1
]}

Gao Yan-jun ^{[1
]}

Weng Zhu-lin ^{[1
]}

Yang Jian-ping ^{[2
]}

Li Xing-ao ^{[2
]}

机构：

[1] Hubei Univ Nationalities, Sch Sci, Enshi 445000, Hubei, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Sch Sci, Nanjing 210046, Jiangsu, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE ON FUTURE COMPUTER SCIENCE AND APPLICATION (FCSA 2011), VOL 1 | 2011年

关键词：

Copper nitride film; DC magnetron sputtering; Resistivity; COPPER NITRIDE; RECORDING MEDIA; TIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper nitride film and doping Al copper nitride film were deposited on glass substrates by reactive DC magnetron sputtering at high N-2-gas flow rate and low partial pressure(0.5Pa), 100 degrees C substrate temperature. X-ray diffraction (XRD) shows that the two films' growth prefers [111] direction. XRD and AFM (atomic force microscopy) show that the Al doped copper nitride film was weak crystalline, but the deposition rate and the resistivity of Al doped Cu3N film have been increased.

引用

页码：226 / 229

页数：4

共 10 条

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