Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device

被引:15
|
作者
Körbl, M
Gröning, A
Schweizer, H
Gentner, JL
机构
[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
[2] Grp Interet Econ, F-91460 Marcoussis, France
关键词
D O I
10.1063/1.1497448
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use an adaptation of the variable stripe length method to measure the spectral gain of InGaAsP/InP laser structures with 12 coupled quantum films as active volume. The samples are prepared with a two-segment contact stripe for current injection, so the length of the electrically pumped region can be varied between two values. From the corresponding ratio of emission intensities, the gain spectra are extracted. Their analysis with respect to the dependency on the injected carrier density shows the possibility of a simple description of the gain of coupled quantum wells. (C) 2002 American Institute of Physics.
引用
收藏
页码:2942 / 2944
页数:3
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