Reactive ion etching of InAlAs and InAlGaAs with BCl3/Cl2/CH4/H2 mixtures for long-wavelength VCSELs

被引：1
|
作者：
Shin, JH [1 ]
Yoo, BS [1 ]
Kwon, OK [1 ]
机构：
[1] Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Taejon 305600, South Korea
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 06期
关键词：
D O I：
10.1049/el:20000400
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel reactive ion etching process for the InAlGaAs material system lattice matched to InP using BCl3/Cl-2/CH4/H-2 mixtures is presented. The etching speed is similar to 700 Angstrom/min, which remains approximately the same for all InAlGaAs compositions. The smoothness and the anisotropy of the etched wall appear to be very good. The etching characteristics of InP and mask materials are also reported.
引用
收藏
页码：542 / 543
页数：2
相关论文
共 50 条
  • [1] ANISOTROPIC REACTIVE ION ETCHING OF ALUMINUM USING CL2, BCL3, AND CH4 GASES
    LUTZE, JW
    PERERA, AH
    KRUSIUS, JP
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (01) : 249 - 252
  • [2] BCL3/CL2 REACTIVE ION ETCHING OF TRENCHES
    ROBB, FY
    SULLIVAN, DF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C126 - C126
  • [3] REACTIVE ION ETCHING OF ALUMINUM SILICON IN BBR3/CL2 AND BCL3/CL2 MIXTURES
    BELL, HB
    ANDERSON, HM
    LIGHT, RW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1184 - 1191
  • [4] Reactive ion etching of GaN using Cl2/BCl3
    Lee, IH
    Choi, YS
    Youn, KK
    Yu, SJ
    Rhee, JK
    Kim, SG
    [J]. COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 769 - 774
  • [5] Electron cyclotron resonance plasma etching of GaSb in Cl2/BCl3/CH4/Ar/H2 at room temperature
    Langer, JP
    Dutta, PS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1511 - 1512
  • [6] Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas
    Lee, Hack Joo
    Kwon, Bong Soo
    Kim, Hyun Woo
    Kim, Seon Il
    Yoo, Dong-Geun
    Boo, Jin-Hyo
    Lee, Nae-Eung
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) : 6960 - 6964
  • [7] CHARACTERIZATION OF AL/SI REACTIVE ION ETCHING IN BBR3/CL2 VS BCL3/CL2 MIXTURES
    BELL, HB
    LIGHT, RW
    ANDERSON, HM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C311 - C311
  • [8] Etching characteristics of ZnO and Al-doped ZnO in inductively coupled Cl2/CH4/H2/Ar and BCl3/CH 4/H2/Ar plasmas
    Lee, Hack Joo
    Kwon, Bong Soo
    Kim, Hyun Woo
    Kim, Seon Il
    Yoo, Dong-Geun
    Boo, Jin-Hyo
    Lee, Nae-Eung
    [J]. Japanese Journal of Applied Physics, 2008, 47 (8 PART 3): : 6960 - 6964
  • [9] Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
    Gryglewicz, J.
    Oleszkiewicz, W.
    Ramiaczek-Krasowska, M.
    Szyszka, A.
    Prazmowska, J.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tlaczala, M.
    [J]. MATERIALS SCIENCE-POLAND, 2011, 29 (04): : 260 - 265
  • [10] INSITU PASSIVATION OF GAAS AFTER BCL3/CL2 REACTIVE ION ETCHING
    YOON, E
    GOTTSCHO, RA
    DONNELLY, VM
    HOBSON, WS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2197 - 2200
12345