A boundary conforming mesh generation algorithm for simulation of devices with complex geometry

被引：0
|
作者：
Moroz, V
Motzny, S
Lilja, K
机构：
来源：
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 1997年
关键词：
D O I：
10.1109/SISPAD.1997.621395
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An automatic boundary conforming mesh generation algorithm is proposed for device simulation. The algorithm provides meshes with extremely anisotropic elements stretched along the boundaries and gridlines orthogonal to the boundaries and pin junctions. The meshes created are especially efficient for simulation of MOSFETs with curved channel surfaces.
引用
收藏
页码：293 / 295
页数：3
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