High Performance State Retention with Power Gating applied to CPU subsystems - design approaches and silicon evaluation

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作者
Flynn, David [1 ]
机构
[1] ARM Ltd, R&D, Cambridge, England
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Power management is of increasing concern and challenge to SOC and product designers [1], [2]. Power Gating (PG) is now well understood as a technique for reducing static leakage power when circuits are idle [3]. State-Retention Power Gating (SRPG) enhancements in hardware [4] can address fast wake-up latency and transparency to system software but have area, performance and robustness/ reliability impacts that need minimizing [5]. This presentation addresses practical application of State Retention Power Gating to CPU subsystems, (but applicable to other SOC sub-systems) and covers what matters from the system and RTL designer perspective building on the EDA implementation support from UPF [6] and CPF [7] power intent. Current EDA support for Power Gating is tuned around "logic-level" drive of power gates. The new techniques that are described and contrasted build on the multi-voltage aware tools and formats to add enhanced power gate performance as well as addressing state retention without the traditional area and timing penalties. The work described in this paper is at an applied research phase and has been undertaken in collaboration with researches in the Electronics and Computer Science faculty of the University of Southampton in the UK; the technology demonstrator implemented in Silicon (on a 65nm Low Leakage process) was co-developed and fabricated using the EUROPRACTICE "mini@sic" Multi-Project Wafer service with TSMC Inc as the semiconductor foundry [8].
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