Termination-dependent surface in-gap states in a potential mixed-valent topological insulator: SmB6

被引：39
|
作者：
Kim, Junwon [1 ]
Kim, Kyoo [1 ]
Kang, Chang-Jong [1 ]
Kim, Sooran [1 ]
Choi, Hong Chul [1 ]
Kang, J. -S. [2 ]
Denlinger, J. D. [3 ]
Min, B. I. [1 ]
机构：
[1] Pohang Univ Sci & Technol, PCTP, Dept Phys, Pohang 790784, South Korea
[2] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.90.075131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the surface states of a potential mixed-valent topological insulator SmB6 based on first-principles density functional theory slab band structure analysis. We have found that metallic surface states are formed in the bulk band gap region, providing evidence for the topological insulating nature of SmB6. The obtained surface in-gap states are quite different from those in existing reports in that they are formed differently depending on the Sm or B-6 surface termination, and are composed of mainly the Sm 4f state indicating the essentiality of including f electrons in describing the surface states. We have obtained the spin chiral structures of the Fermi surfaces, which are also in accordance with the topological insulating nature of SmB6.
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页数：6
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