Computer-aided design methodology for electrostatic discharge (ESD) protection applications

Physical mechanisms that define the triggering conditions of lateral P1N1-P2N2 structures for ESD (electrostatic discharge) protection are identified using 2-D numerical simulations. The TCAD (technology computer aided design) allows for accurate prediction of the forward and reverse blocking voltages, necessary for custom ESD protection design. Symmetrical and asymmetrical dual-polarity S-type I-V characteristics are achieved for bipolar input/output ESD protection design. This is realized by using 1) tailored forward- and reverse- blocking junction configurations embedded in coupled (P1N1-P2N2)//(N2P3-N3P1) structures, and 2) optimized adjustment of the structures' doping implantations and isolation regions.