Infrared spectroscopy of silicon oxide layer formed on silicon substrate

被引：0
|
作者：
Fujikawa, J [1 ]
Ohta, H [1 ]
Sakai, A [1 ]
Fujikawa, K [1 ]
机构：
[1] Muroran Inst Technol, Muroran, Hokkaido 0508585, Japan
来源：
ELECTROCHEMICAL TECHNOLOGY APPLICATIONS IN ELECTRONICS III | 2000年 / 99卷 / 34期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An oxide film was formed on the surface of a silicon single crystal by the anodic oxidation method at constant current in the ethylene glycol solution of the potassium nitrate to which a certain amount of water had been added. The asymmetry, etc., of the absorption peak, which has been an open issue, was examined by the peak separation for the change in the formation voltage during the electrolytic oxidation and the infrared transmission spectrum measurement of the oxide film. An interfacial phase different from the main growth layer of the oxide film was found being formed during the first stage of the oxidation based on these examinations.
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页码：89 / 94
页数：6
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