Total Ionizing Dose Tolerance of Ag-Ge40S60 based Programmable Metallization Cells

被引：19

作者：

Dandamudi, P. ^{[1
]}

Kozicki, M. N. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Gonzalez-Velo, Y. ^{[1
]}

Holbert, K. E. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 04期

关键词：

CBRAM; chalcogenide glass; non-volatile memory; programmable metallization cells; radiation hard; ReRAM; RRAM; total ionizing dose; RESISTIVE SWITCHING MEMORIES; CHALCOGENIDE GLASSES; NONVOLATILE MEMORY; THIN-FILMS; AG; DIFFUSION; SILVER; RICH;

D O I：

10.1109/TNS.2014.2304634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using Co-60 gamma rays. The irradiation tests on the PMC devices, with two different Ag anode thicknesses (35 nm and 100 nm), show no significant degradation in the resistance switching characteristics.

引用

页码：1726 / 1731

页数：6

共 19 条

[1] Total Ionizing Dose Tolerance of the Resistance Switching of Ag-Ge40S60 based Programmable Metallization Cells
Dandamudi, P.
Barnaby, H. J.
Kozicki, M. N.
Gonzalez-Velo, Y.
Holbert, K. E.
2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2013,
[2] Reversible migration of silver on memorized pathways in Ag-Ge40S60 films
Orava, J.
Kozicki, M. N.
Yannopoulos, S. N.
Greer, A. L.
AIP ADVANCES, 2015, 5 (07):
[3] Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells
Gonzalez-Velo, Y.
Barnaby, H. J.
Kozicki, M. N.
Dandamudi, P.
Chandran, A.
Holbert, K. E.
Mitkova, M.
Ailavajhala, M.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4563 - 4569
[4] Total-Ionizing-Dose Effects on the Impedance of Silver-doped Chalcogenide Programmable Metallization Cells
Gonzalez-Velo, Yago
Barnaby, Hugh J.
Kozicki, Michael N.
Holbert, Keith
2014 IEEE AEROSPACE CONFERENCE, 2014,
[5] Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
Chen, W.
Fang, R.
Barnaby, H. J.
Balaban, M. B.
Gonzalez-Velo, Y.
Taggart, J. L.
Mahmud, A.
Holbert, K.
Edwards, A. H.
Kozicki, M. N.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 269 - 276
[6] Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes
Kozicki, MN
Balakrishnan, M
Gopalan, C
Ratnakumar, C
Mitkova, M
2005 Non-Volatile Memory Technology Symposium, Proceedings, 2005, : 83 - 89
[7] ELECTROCHEMICAL METALLIZATION CELLS BASED ON Ag-Ge-S AND Ag-Ge-Ga-S ELECTROLYTES
Valkova, S.
Wagner, T.
Prikryl, J.
CHALCOGENIDE LETTERS, 2016, 13 (04): : 139 - 144
[8] The effects of active layer thickness on Programmable Metallization Cell based on Ag-Ge-S
Wang, F.
Dunn, W. P.
Jain, M.
De Leo, C.
Vickers, N.
SOLID-STATE ELECTRONICS, 2011, 61 (01) : 33 - 37
[9] Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells
Mahalanabis, Debayan
Gonzalez-Velo, Yago
Barnaby, Hugh J.
Kozicki, Michael N.
Dandamudi, Pradeep
Vrudhula, Sarma
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) : 3723 - 3730
[10] High total-ionizing-dose tolerance field programmable gate array
Fujimori, Takumi
Watanabe, Minoru
2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,

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