Interface Influence on the Long-Wave Auger Suppressed Multilayer N+πP+p+n+ HgCdTe HOT Detector Performance

This paper reports on N+-pi interface influence on the performance: dark current and response time of multilayer long-wave infrared mercury cadmium telluride (MCT - HgCdTe) N+pi P(+)p(+)n(+) detector under high operating temperature conditions, T = 230 K. A detailed analysis of the dark current and response time as a function of device architecture, i.e., N+-pi interface and applied bias was performed to optimize the working conditions. Dark current of the long-wave HgCdTe detector with 50% cutoff wavelength of lambda co approximate to 10.6 mu m at T = 230 K was reduced from approximate to 62 to 12 A/cm(2), while response time could be reduced to approximate to 52 ps for low-voltage operation, V = 200 mV.