Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation

被引：19

作者：

Bushunov, Andrey A. ^{[1
,2
]}

Teslenko, Andrei A. ^{[1
,2
]}

Tarabrin, Mikhail K. ^{[1
,2
,3
]}

Lazarev, Vladimir A. ^{[1
]}

Isaenko, Lyudmila I. ^{[2
]}

Eliseev, Alexander P. ^{[2
]}

Lobanov, Sergei, I ^{[2
]}

机构：

[1] Bauman Moscow State Tech Univ, Moscow 105005, Russia

[2] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia

[3] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

OPTICS LETTERS | 2020年 / 45卷 / 21期

基金：

俄罗斯科学基金会;

关键词：

ABSORPTION; INDEX;

D O I：

10.1364/OL.404515

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance. In this work, ARMs were fabricated on the surface of a GaSe plate by single-pulse femtosecond laser ablation. An average GaSe surface transmittance of 94% in the 7-11 mu m range and a maximum transmittance of 97.8% at 8.5 mu m were obtained. The proposed method can be used to increase the efficiency of GaSe-based nonlinear converters. (C) 2020 Optical Society of America

引用

页码：5994 / 5997

页数：4

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