InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth

被引：0
|
作者：
Tsukamoto, Shiro [1 ]
机构：
[1] Anan Natl Coll Technol, Tokushima 7740017, Japan
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
in-situ; molecular beam epixtaxy; scanning tunnelling microscope; GaAs; InAs; Quantum Dots;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully investigated the self-assembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on first-principles calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.
引用
收藏
页码：605 / 608
页数：4
相关论文
共 50 条
  • [1] In-situ scanning tunneling microscopy observation of InAs quantum dots on GaAs(001) during molecular beam epitaxy growth
    Tsukamoto, S
    Bell, GR
    Arakawa, Y
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 68 - 73
  • [2] In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth
    Bell, GR
    Pristovsek, M
    Tsukamoto, S
    Orr, BG
    Arakawa, Y
    Koguchi, N
    SURFACE SCIENCE, 2003, 544 (2-3) : 234 - 240
  • [3] Scanning tunneling microscopy studies of InGaN growth by molecular beam epitaxy
    Chen, HJ
    Smith, AR
    Feenstra, RM
    Greve, DW
    Northrup, JE
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G9.5
  • [4] Scanning tunneling microscopy images of a triangular quantum dot of InAs
    Kumagai, Takuya
    Tamura, Akira
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (28)
  • [5] High temperature scanning tunneling microscopy during molecular beam epitaxy
    Voigtlander, B
    Zinner, A
    Weber, T
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (07): : 2568 - 2572
  • [6] Growth processes in Si/Si(111) epitaxy observed by scanning tunneling microscopy during epitaxy
    Voigtlander, B
    Weber, T
    PHYSICAL REVIEW LETTERS, 1996, 77 (18) : 3861 - 3864
  • [7] Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy
    Tangmettajittakul, Ong-arj
    Thainoi, Supachok
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1534 - 1536
  • [8] SIMULTANEOUS MOLECULAR-BEAM EPITAXY GROWTH AND SCANNING-TUNNELING-MICROSCOPY IMAGING DURING GE/SI EPITAXY
    VOIGTLANDER, B
    ZINNER, A
    APPLIED PHYSICS LETTERS, 1993, 63 (22) : 3055 - 3057
  • [9] In Situ scanning tunneling microscope observation of InAs wetting layer formation on GaAs(001) during molecular beam epitaxy growth at 500°C
    Honma, Tsuyoshi
    Tsukamoto, Shiro
    Arakawa, Yasuhiko
    Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (29-32):
  • [10] In situ scanning tunneling microscope observation of InAs wetting layer formation on GaAs(001) during molecular beam epitaxy growth at 500 °C
    Honma, Tsuyoshi
    Tsukamoto, Shiro
    Arakawa, Yasuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (29-32): : L777 - L779
12345