Thin film piezoelectric aluminum nitride for piezoelectric micromachined ultrasonic transducers

被引：0
|
作者：
Stoeckel, Chris [1 ]
Meinel, Katja [2 ]
Melzer, Marcel [2 ]
Otto, Thomas [1 ,2 ]
机构：
[1] Fraunhofer ENAS, Chemnitz, Germany
[2] Tech Univ Chemnitz, Chemnitz, Germany
来源：
2018 IEEE SENSORS | 2018年
关键词：
PMUT; AlN; aluminum nitride;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Piezoelectric aluminum nitride (AlN) thin film based piezoelectric micromachined ultrasonic transducers (PMUTs) are processed on 150 mm wafer diameter technology. The 300 pm and 500 pm diameter membranes are arranged in a 3 by 3 array per chip. The membranes are actuated in resonance in air for characterization. The PMUTs deflection is 1250 nm/V at 164.7 kHz for small signal actuation. For 1 V AC actuation the deflection in air is 530 nm/V. The relative change of impedance in resonance is 9.8 %.
引用
收藏
页码：979 / 982
页数：4
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