High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

被引:38
|
作者
Singh, P. K. [1 ]
Sonkusale, S. [1 ]
机构
[1] Tufts Univ, Dept Elect & Comp Engn, Nano Lab, Medford, MA 02155 USA
来源
SCIENTIFIC REPORTS | 2017年 / 7卷
关键词
TRANSMISSION; CONDUCTIVITY;
D O I
10.1038/srep40933
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies.
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页数:8
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