Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

被引：77

作者：

Gilmer, DC ^{[1
]}

Hegde, R ^{[1
]}

Cotton, R ^{[1
]}

Garcia, R ^{[1
]}

Dhandapani, V ^{[1
]}

Triyoso, D ^{[1
]}

Roan, D ^{[1
]}

Franke, A ^{[1
]}

Rai, R ^{[1
]}

Prabhu, L ^{[1
]}

Hobbs, C ^{[1
]}

Grant, JM ^{[1
]}

La, L ^{[1
]}

Samavedam, S ^{[1
]}

Taylor, B ^{[1
]}

Tseng, H ^{[1
]}

Tobin, P ^{[1
]}

机构：

[1] Motorola Inc, Digital DNA Labs, Adv Proc Dev & External Res, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.1499514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline-silicon (poly-Si) gate compatibility issues with HfO2 and Al2O3 capped HfO2 gate dielectrics are reported. It can be generally stated that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results in electrical properties much worse compared to similar HfO2 films using platinum metal gates. However, depositing CVD silicon gates directly onto Al2O3 capped HfO2 showed greater than a 10(4) times reduction in gate leakage compared to the poly-Si/HfO2 and poly-Si/SiO2 controls of similar electrical thickness. (C) 2002 American Institute of Physics.

引用

页码：1288 / 1290

页数：3

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