An improved process, metrology and methodology for shallow trench isolation etch

被引：3

作者：

Gaddam, S ^{[1
]}

Baum, C ^{[1
]}

机构：

[1] Texas Instruments Inc, Kilby Ctr, KFAB, Dallas, TX 75265 USA

来源：

2004 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: ADVANCING THE SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR MANUFACTURING EXCELLENCE | 2004年

关键词：

shallow trench isolation; STI; etch; process improvement; process monitor and control; SPC; scatterometer; metrology;

D O I：

10.1109/ASMC.2004.1309543

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses the development of an improved process for shallow trench isolation (STI) etch, the implementation of scatterometer for metrology and a new methodology for improved STI etch process control and monitoring. Cp/Cpk improvement, reduction in or elimination of process related excursions, higher mean time between clean (MTBC), improved tool availability, improved transistor performance and yield that resulted with the implementation of new process and metrology are reported.

引用

页码：93 / 97

页数：5

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