On the failure of graphene devices by Joule heating under current stressing conditions

被引：9
|
作者：
Durkan, Colm [1 ]
Xiao, Zhuocong [1 ]
机构：
[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FA, England
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 24期
关键词：
D O I：
10.1063/1.4936993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The behaviour of single layer graphene sections under current-stressing conditions is presented. Graphene devices are stressed to the point of failure, and it is seen that they exhibit Joule heating. Using a simple 1-D model for heat generation, we demonstrate how to extract values for the resistivity and thermal coefficient of resistance of graphene devices from their current-voltage characteristics. We also show that graphene flakes with a large number of ripples and folds have higher resistance and fail along a connected pathway of folds. (C) 2015 AIP Publishing LLC.
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页数：4
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