Accurate multibias equivalent-circuit extraction for GaN HEMTs

被引：144

作者：

Crupi, Giovanni ^{[1
]}

Xiao, Dongping

Schreurs, Dominique M. M. -P.

Limiti, Ernesto

Caddemi, Alina

De Raedt, Walter

Germain, Marianne

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

[2] Univ Messina, Dipartimento Fis Mat & Tecnol Fisiche Avanzate, I-98166 Messina, Italy

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

[4] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2006年 / 54卷 / 10期

关键词：

gallium nitride; high electron-mobility transistor (HEMT); multibias; small-signal model;

D O I：

10.1109/TMTT.2006.882403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward "cold" model for modeling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.

引用

页码：3616 / 3622

页数：7

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