SiGe micro-cooler

被引：46
|
作者：
Zeng, GH [1 ]
Shakouri, A
La Bounty, C
Robinson, G
Croke, E
Abraham, P
Fan, XF
Reese, H
Bowers, JE
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93196 USA
[2] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA
[3] LLC, HRL Labs, Malibu, CA 90265 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 24期
关键词：
D O I：
10.1049/el:19991435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film SiGe heterostructure coolers have been Fabricated and characterised. Cooling by as much as 1.1K at room temperature and 1.6K at a substrate temperature of 70 degrees C over a 3 mu m Si/SiGe superlattice barrier has bhn measured. This corresponds to cooling power densities of hundreds of watts per square centimetre.
引用
收藏
页码：2146 / 2147
页数：2
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