Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

被引：0
|
作者：
Kolokolov, KL [1 ]
Ning, CZ [1 ]
机构：
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS III | 2004年 / 5365卷
关键词：
optical gain; quantum wells; mid infrared; type-II; heterostructures; multiband Hamiltonian;
D O I：
10.1117/12.530465
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k (.) p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum,ell, where TM mode optical gain can be as high as 4000cm(-1). We also studied effects of doping on differential gain.
引用
收藏
页码：259 / 266
页数：8
相关论文
共 50 条
  • [1] Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells
    Kolokolov, KI
    Ning, CZ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (08) : 1581 - 1583
  • [2] Mid-IR type-I and type-II quantum cascade lasers
    Hwang, WY
    Lin, CH
    Zaitsev, SV
    Um, J
    Ren, HW
    Gmachl, C
    Hutchinson, AL
    Capasso, F
    [J]. 2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 69 - 70
  • [3] Mid-IR photodetectors based on InAs/InGaSb type-II quantum wells
    Brown, GJ
    Ahoujja, M
    Szmulowicz, F
    Mitchel, WC
    Lin, CH
    [J]. INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 129 - 134
  • [4] Mid-IR optical limiter based on type-II quantum wells
    Khurgin, JB
    Vurgaftman, I
    Meyer, JR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (10) : 1490 - 1499
  • [5] Modeling of InAs/GaInSb/AlSb type-II mid-IR interband cascade lasers
    Mu, YM
    Yang, RQ
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 811 - 822
  • [6] Photoluminescence of InAs1-xSbx/AlSb single quantum wells:: Transition from type-II to type-I band alignment
    Yang, MJ
    Bennett, BR
    Fatemi, M
    Lin-Chung, PJ
    Moore, WJ
    Yang, CH
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 8192 - 8194
  • [7] Photoluminescence of InAs1-xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment
    [J]. 1600, American Inst of Physics, Woodbury, NY, USA (87):
  • [8] Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gain
    Alvi, P. A.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (05):
  • [9] Mid-IR interband cascade electroluminescence in type-II quantum wells
    Yang, RQ
    Lin, CH
    Chang, PC
    Murry, SJ
    Zhang, D
    Pei, SS
    Kurtz, SR
    Chu, AN
    Ren, F
    [J]. ELECTRONICS LETTERS, 1996, 32 (17) : 1621 - 1622
  • [10] COMPARISON OF OPTICAL NONLINEARITIES OF TYPE-II AND TYPE-I QUANTUM-WELLS
    MEISSNER, K
    FLUEGEL, B
    BINDER, R
    KOCH, SW
    KHITROVA, G
    PEYGAMBARIAN, N
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (03) : 259 - 261
12345