Optimization of a Zinc Oxide Photoelectrode for Dye-Sensitized Solar Cells

In this study, the influence of the seed-layer thickness of photoelectrodes on the performance of dye-sensitized solar cells was investigated. Al-doped ZnO films deposited on fluorine-doped tin oxide substrates by using facing targets sputtering systems of various thicknesses were used as seed layers, and ZnO rod array photoelectrodes were synthesized on the AZO seed layers via the hydrothermal process. The crystallinity of the ZnO photoelectrode was improved, and the average diameter of the ZnO rod increased from 100 +/- 10 to 250 +/- 10 nm as the thickness of the seed layer increased from 200 to 600 nm. The maximum fill factor, open-circuit voltage, current density, and power conversion efficiency of the ZnO rod array photoelectrode with a seed layer of thickness 600 nm were 31.08%, 0.53 V, 5.53 mA/cm(2), and 0.91%, respectively.