Modulated Infrared Electroluminescence From Organic Light-Emitting Diodes

被引：5

作者：

Zang, Faxin ^{[1
]}

Sum, Tze-Chien ^{[1
]}

Zhu, Furong ^{[2
]}

Hong, Zi-Ruo ^{[3
]}

Sun, Xiaoyan ^{[3
]}

Li, Wen Lian ^{[3
]}

Huan, Cheng Hon Alfred ^{[1
]}

机构：

[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2009年 / 27卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Modulated infrared electroluminescence; organic light emitting devices; rare-earth complexes and recombination zone; COMPLEX; EFFICIENT; EMISSION; DEVICES;

D O I：

10.1109/JLT.2009.2013872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modulated infrared electroluminescence from organic light-emitting diodes (OLEDs) based on rare earth complexes (tris-dibenzoylmethanato-mono-bathophenanthroline) erbium or neodymium were fabricated. The modulations were realized by varying the device configuration and by varying an applied forward bias at room temperature. We found that the intensity of EL peak at 1.54 mu M was reduced by a factor of almost 20 times as the Nd complex layer thickness in the OLEDs was increased from 1 nm to 5 nm. The intensity ratio of the 1.54 (Nd) to 1.06 mu M (Er) decreases from 0.82 to 0.53 as the forward bias increases from 6.5 V to 18 V. The effects of the modulation of these IR emissions were also discussed.

引用

页码：1522 / 1526

页数：5

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