Layertronic control of topological states in multilayer metal-organic frameworks

被引:16
|
作者
Crasto de Lima, F. [1 ]
Ferreira, G. J. [1 ]
Miwa, R. H. [1 ]
机构
[1] Univ Fed Uberlandia, Inst Fis, CP 593, BR-38400902 Uberlandia, MG, Brazil
来源
JOURNAL OF CHEMICAL PHYSICS | 2019年 / 150卷 / 23期
关键词
INSULATORS; SPINTRONICS;
D O I
10.1063/1.5100679
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)(3) MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreover, by applying an external electric field parallel to the stacking direction, the spatial localization of the electronic states can be controlled for a chosen Fermi energy. This localization behavior is studied comparing density functional theory calculations with a kagome lattice tight-binding model. Furthermore, for infinite stacked nanoribbons, a new V-gutter Dirac state is found in the side surfaces, which allows anisotropic current control by tuning the Fermi energy. Our results can be immediately extended to other kagome MOFs with eclipsed stackings, introducing a new degree of freedom (layer localization) to materials design.
引用
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页数:9
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