Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

被引：2
|
作者：
Nishisaka, M.
Shirata, O.
Sakamoto, D.
Enokida, T.
Hagino, H.
Asano, T.
机构：
[1] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 8208502, Japan
[2] Fukuryo Semicon Engn, Nishi Ku, Fukuoka 8190192, Japan
来源：
THIN SOLID FILMS | 2006年 / 508卷 / 1-2期
关键词：
strained-Si; SiGe; SGOI; wet oxidation; MOSFET;
D O I：
10.1016/j.tsf.2005.06.107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have applied wet oxidation to the isolation and gate oxidation of strained-Si/SiGe-on-insulator (SGOI) wafers. Wet oxidation of Si0.8Ge0.2 at 700 degrees C proceeds 30 times as fast as the oxidation rate of strained-Si and without forming a Ge condensed layer behind (SiGC)O-2. P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on 15% Ge strained-Si/SGOI wafers were fabricated using wet oxidation to simultaneously form the (SiGe)O-2 field oxide and the gate SiO2. Transconductance was found to be enhanced by 50% when compared with unstrained SOI devices. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：256 / 259
页数：4
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