Radiative association of C and P, and Si and P atoms

被引：7

作者：

Andreazza, C. M. ^{[1
]}

Marinho, E. P. ^{[1
]}

Singh, P. D. ^{[1
]}

机构：

[1] Univ Estadual Paulista, IGCE, DEMAC, BR-13500230 Rio Claro, SP, Brazil

来源：

MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY | 2006年 / 372卷 / 04期

关键词：

atomic data; atomic processes; circumstellar matter; ISM : molecules;

D O I：

10.1111/j.1365-2966.2006.10964.x

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 x 10(-18) to 1.62 x 10(-18) cm(3) s(-1) and from 3.73 x 10(-20) to 7.03 x 10(-20) cm(3) s(-1) for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.

引用

页码：1653 / 1656

页数：4

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