Vertically aligned carbon nanotube heterojunctions

被引:32
|
作者
Cassell, AM [1 ]
Li, J [1 ]
Stevens, RMD [1 ]
Koehne, JE [1 ]
Delzeit, L [1 ]
Ng, HT [1 ]
Ye, Q [1 ]
Han, J [1 ]
Meyyappan, M [1 ]
机构
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
基金
美国国家航空航天局;
关键词
D O I
10.1063/1.1794356
中图分类号
O59 [应用物理学];
学科分类号
摘要
The bottom-up fabrication and electrical properties of end-to-end contacted multiwalled carbon nanotube (MWCNT) heterojunctions are reported. The vertically aligned MWCNT heterojunction arrays are formed via successive plasma-enhanced chemical vapor deposition processing to achieve the layered junction architecture. Electron microscopy and current-sensing atomic force microscopy are used to reveal the physical nature of the junctions. Symmetric, nonlinear I-V curves of the as-fabricated junctions indicate that a tunnel barrier is formed between the end-to-end contacted MWCNTs. Repeated high bias I-V scans of many devices connected in parallel fuses the heterojunctions, as manifested by a shift to linear I-V characteristics.
引用
收藏
页码:2364 / 2366
页数:3
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