Investigation of Internal Mechanical Stresses in the Si Crystals Grown by a Method of Crucibleless Zone Melting

被引：0
|
作者：
Asnis, Yu A. [1 ]
Barans'kiy, P. I. [2 ]
Babich, V. M. [2 ]
Zabolotin, S. P. [1 ]
Klad'ko, V. P. [2 ]
Slobodyan, M. V. [2 ]
机构：
[1] NAS, Inst Elect Welding EO Paton Kiev, Kiev, Ukraine
[2] NAS, VE Lashkarov Inst Semicond Phys, Kiev, Ukraine
来源：
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2008年 / 30卷 / 09期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 'X'Pert PRO MRD XL' diffractometer is used to investigate the structural ordering in a crystal lattice of the silicon samples during their growth in the presence of the external electrical field on the molten zone. The question of the internal mechanical stresses, which appear due to both the lattice-parameters' misfit and the distinction of thermal-extension coefficients of materials contacting in nanoobjects such as superlattices and quantum dots, is discussed.
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页码：1229 / 1238
页数：10
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