1.3-mu m polarization insensitive amplifiers with integrated-mode transformers

被引:3
|
作者
Tishinin, D
Uppal, K
Kim, I
Dapkus, PD
机构
[1] Dept. of Elec. Eng./Electrophysics, University of Southern California, Los Angeles
[2] SDL, San Jose
关键词
integrated optics; mode-matching methods; polarization; semiconductor lasers; semiconductor optical amplifiers;
D O I
10.1109/68.623255
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report for the first time polarization-insensitive, mixed-strain quantum-well semiconductor optical amplifiers (QW SOA's) with monolithically integrated laterally tapered section for mode transformation. This taper section improves coupling efficiency to cleaved single-mode fibers by 3-4 dB compared to an untapered linear waveguide. We have demonstrated 18-dB chip gain with less that l-dB polarization sensitivity of the gain. We also found that the output saturation power is about 10 dBm for all polarizations. The gain bandwidth was estimated to be 15 nm.
引用
收藏
页码:1337 / 1339
页数:3
相关论文
共 50 条
  • [1] Study of 1.3-mu m tapered waveguide spotsize transformers
    Uppal, K
    Tishinin, D
    Kim, I
    Dapkus, PD
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 975 - 979
  • [2] High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions
    Donnelly, JP
    Walpole, JN
    Betts, GE
    Groves, SH
    Woodhouse, JD
    ODonell, FJ
    Missaggia, LJ
    Bailey, RJ
    Napoleone, A
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (11) : 1450 - 1452
  • [3] High-power 1.3-mu m InGaAsP/InP lasers and amplifiers with tapered gain regions
    Walpole, JN
    Betts, GE
    Donnelly, JP
    Groves, SH
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, 1997, 3001 : 74 - 81
  • [4] Time-domain modeling of mode suppression in 1.3-mu m Fabry-Perot lasers
    Kozlowski, DA
    Young, JS
    Plumb, RGS
    England, JMC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (06) : 755 - 757
  • [5] Zero-gap directional coupler switch integrated into a silicon-on insulator for 1.3-mu m operation
    Zhao, CZ
    Liu, EK
    Li, GZ
    Gao, Y
    Guo, CS
    OPTICS LETTERS, 1996, 21 (20) : 1664 - 1666
  • [6] 1.3-mu m uncooled DFB lasers with low distortion for CATV application
    Watanabe, H
    Aoyagi, T
    Shibata, K
    Takiguchi, T
    Kakimoto, S
    Higuchi, H
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 659 - 665
  • [7] Polarization independent bulk active region semiconductor optical amplifiers for 1.3 mu m wavelengths
    Holtmann, C
    Besse, PA
    Brenner, T
    Melchior, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 343 - 345
  • [8] A 1.3-mu m wavelength laser with an integrated output power monitor using a directional coupler optical power tap
    Koren, U
    Miller, BI
    Young, MG
    Chien, M
    Dreyer, K
    BenMichael, R
    Capik, RJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 364 - 366
  • [9] Crosstalk in 1.3 mu m praseodymium fluoride fiber amplifiers
    Fleming, SC
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (01) : 66 - 71
  • [10] High-temperature characteristics of 1.3-mu m InAsP/InAlGaAs MQW lasers
    Yamada, M
    Anan, T
    Tokutome, K
    Sugou, S
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 559 - 562