Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

被引：1
|
作者：
Broda, Artur [1 ]
Jezewski, Bartosz [1 ]
Sankowska, Iwona [1 ]
Szymanski, Michal [2 ]
Hoser, Pawel [2 ]
Muszalski, Jan [1 ]
机构：
[1] Inst Microelect & Photon, Lukasiewicz Res Network, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Warsaw Univ Life Sci, Inst Informat Technol, SGGW, PL-02776 Warsaw, Poland
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 2020年 / 126卷 / 12期
关键词：
SEMICONDUCTOR DISK LASER; OUTPUT POWER; EFFICIENCY;
D O I：
10.1007/s00340-020-07544-y
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.
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页数：10
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