Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides

被引：5
|
作者：
Degen, C
Jennemann, G
Fischer, I
Elsässer, W
Leu, S
Rettig, R
Stolz, W
机构：
[1] Tech Univ Darmstadt, Inst Angew Phys, D-64289 Darmstadt, Germany
[2] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2002年 / 34卷 / 07期
关键词：
nonlinear optics; second-harmonic generation; semiconductor waveguides; SESHG;
D O I：
10.1023/A:1016148116882
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the impact of waveguide properties on the performance of surface-emitting second-harmonic generation (SESHG) devices. Using multi-layer AlGaAs/GaAs ridge waveguides that are optimized for SESHG at fundamental wavelengths lambda(omega)-1060 and 1550 nm, we achieve nonlinear cross-sections among the highest reported so far. In these devices, characteristics of the guided fundamental wave strongly determine the SESHG performance: multiple reflections in the longitudinal direction affect the conversion efficiency while higher order lateral waveguide modes modify the SESHG farfield. Both effects are significant for applications of SESHG in integrated photonic circuits.
引用
收藏
页码：707 / 716
页数：10
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