High-Efficient Solar Cells by the Ag/Cu-Assisted Chemical Etching Process on Diamond-Wire-Sawn Multicrystalline Silicon

被引：31
|
作者：
Zheng, Chaofan [1 ,2 ]
Shen, Honglie [1 ,2 ,3 ]
Pu, Tian [1 ,2 ,4 ]
Jiang, Ye [1 ,2 ]
Tang, Quntao [1 ,2 ]
Yang, Wangyang [1 ,2 ]
Chen, Chunming [1 ,2 ]
Rui, Chunbao [4 ]
Li, Yufang [1 ,2 ,3 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China
[2] Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Nanjing 210016, Jiangsu, Peoples R China
[3] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China
[4] Phono Solar Technol Co Ltd, Nanjing 210032, Jiangsu, Peoples R China
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2017年 / 7卷 / 01期
关键词：
Ag and Cu dual elements; diamond wire sawn (DWS); invert pyramid structure; metal-assisted chemical etching (MACE); removal of saw marks; solar cell;
D O I：
10.1109/JPHOTOV.2016.2631304
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, we presented a novel low-cost method for diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) wafer texturation based on the metal-assisted chemical etching process with Ag/Cu dual elements and nanostructure rebuilding (NSR) treatment to remove the saw marks and to realize uniform invert pyramid textured structures. Benefiting from both the increased optical absorption and better passivation, an efficiency of 18.71% for invert pyramid mc-Si solar cells from a DWS wafer with a standard size of 156 x 156 mm(2) was obtained, which was 0.58% and 2.33% absolutely higher than that (18.13%) of the traditional mc-Si solar cell and than that (16.38%) of the black mc-Si solar cell without NSR treatment, respectively.
引用
收藏
页码：153 / 156
页数：4
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