Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal-oxide-semiconductor field-effect transistors

The random telegraph noise (RTN) characteristics in numerous metal-oxide-semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 mu V. Because of the small floor noise RTN characteristics with small amplitudes could be measured. The time constants: time to emission (T-e) and time to capture (T-c) were extracted from measurement results with sampling period of 1 mu s and sampling time of 600 s, and they were distributed for over six orders of magnitude. Based on the extracted data of T-e and T-c, there is no correlation between (T-e) and (T-c). Also, it was clarified that the time constant ratio (< T-c >/< T-e >) were distributed over nine orders of magnitude. Additionally, the gate bias dependence of < T-e >, < T-c >, and < T-c >/< T-e > were analyzed. The distribution of (T-e) is shifted to larger values with the increase of drain current (I-D) and that of (T-c) is shifted to smaller values with the increase of I-D. (C) 2014 The Japan Society of Applied Physics