Structural and optical properties of CdS thin film obtained by chemical bath deposition and effect of annealing

被引：0

作者：

Pushpalatha, H. L. ^{[1
]}

Bellappa, S. ^{[2
]}

Narayanaswamy, T. N. ^{[3
]}

Ganesha, R. ^{[1
]}

机构：

[1] Univ Mysore, Yuvarajas Coll, Dept Phys, Mysore 570005, Karnataka, India

[2] GSSS Inst Engn & Technol Women, Dept Chem, Mysore 570016, Karnataka, India

[3] Govt Coll, Dept Phys, Mysore 570016, Karnataka, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2014年 / 52卷 / 08期

关键词：

II-VI Semiconductor; Thin film; Chemical bath deposition; Annealing; Structural properties; Optical properties; ADSORPTION;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cadmium sulphide (CdS) thin film was deposited on glass substrate by chemical bath deposition (CBD) by single dip method. The bath-temperature was at 80 degrees C and pH at 11. The film was annealed in air at 300 degrees C for one hour. The as-deposited and annealed films were characterized by XRD, UV-visible spectrophotometer, EDAX and photoluminescence study. The film-thickness of 391.1 nm was revealed by Ellipsometry. Coexistence of hexagonal and cubic structure of the as-deposited film was confirmed by XRD. On annealing, the film was confirmed to be purely hexagonal. The band gaps of 2.35 eV of the as-deposited film and 2.29 eV of the annealed film were derived from the optical transmittance data of UV-VIS spectrum. Photoluminescence (PL) spectrum of the CdS thin film exhibits green and red emission peaks with different intensity on annealing. EDAX spectrum confirms the transformation of CdS thin film from off-stoichiometric to near stoichiometric state on annealing.

引用

页码：545 / 549

页数：5

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