Electron-phonon relaxation in hot-electron detectors below 1 K

被引:0
|
作者
Karasik, BS [1 ]
Sergeev, AV [1 ]
Gershenson, ME [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源
LOW TEMPERATURE DETECTORS | 2002年 / 605卷
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中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Recently proposed submillimeter hot-electron direct detectors rely on a weak thermal coupling between electrons and phonons. According to the theory, this should occur in impure films. So far, the experimental situation has been somewhat confusing. A number of works have shown a cubic temperature dependence of the electron-phonon relaxation rate below I K. In contrast to the traditional explanation, we show that it was not a clean limit behavior but rather an intermediate temperature asymptotics. In this case, an electron scattering from transversal phonons mediated by vibrating impurities/boundaries dominates. In our recent experiments we reached the dirty limit predicted by the theory in Hf and Ti films. A measured electron-phonon relaxation time followed the T-4 dependence and was a record-long (25 ms) at 40 mK.
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页码:75 / 78
页数:4
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