100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer

被引：42

作者：

Papusoi, C. ^{[1
]}

Delaet, B. ^{[2
]}

Rodmacq, B. ^{[1
]}

Houssameddine, D. ^{[1
]}

Michel, J. -P. ^{[2
]}

Ebels, U. ^{[1
]}

Sousa, R. C. ^{[1
]}

Buda-Prejbeanu, L. ^{[1
]}

Dieny, B. ^{[1
]}

机构：

[1] CEA, INAC, SPINTEC, F-38054 Grenoble, France

[2] CEA, LETI, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

MRAM devices;

D O I：

10.1063/1.3206919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast spin-transfer precessional switching between two stable states of a magnetic random access memory device is demonstrated in structures comprising a perpendicularly magnetized polarizing layer (PL(perpendicular to)), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL) in a PL(perpendicular to)/spacer/FL/spacer/AL stack. Back and forth switching can be achieved with sub-ns current pulses of the same polarity. The spin-torque influence from the analyzer leads to an asymmetric dependence of the switching properties as a function of the current sign and initial state.

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页数：3

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