Maximum optimum load of class-E RF tuned power amplifier in low voltage design

被引：0
|
作者：
Hu, HX [1 ]
Li, YM [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
CHINESE JOURNAL OF ELECTRONICS | 2002年 / 11卷 / 03期
关键词：
class-E; power amplifier; optimum load;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optimum load (R-Lopt) of class-E power amplifier in optimum condition is analyzed in terms of the circuit component values. The theoretical maximum R-Lopt is derived, and the corresponding component values are evaluated. When the amplifier is operated with the maximum R-Lopt, the resistive power loss in the matching network can be substantially reduced.
引用
收藏
页码：315 / 317
页数：3
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