Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency

被引：104
|
作者：
Ortsiefer, M [1 ]
Shau, R [1 ]
Böhm, G [1 ]
Köhler, F [1 ]
Amann, MC [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期
关键词：
D O I：
10.1063/1.126290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A significantly improved InP-based vertical-cavity surface-emitting laser with record device performance is demonstrated. Utilizing a twofold epitaxial growth process, self-adjusted lateral current confinement and index guiding are accomplished by means of a buried InGa(Al)As tunnel junction. Front and back mirrors are realized by 35 epitaxial InGaAlAs/InAlAs layer pairs and a 1.5 MgF2/a-Si layer pair, respectively. At room temperature and under continuous wave condition, lasers with small aperture diameters of only 13 mu m exhibit record output powers of 1.6 mW with quantum efficiencies around 25%. For these devices, threshold current and voltage are as low as 4 mA and 1.2 V, respectively, because of low series resistances around 70 Omega. (C) 2000 American Institute of Physics. [S0003-6951(00)05016-6].
引用
收藏
页码：2179 / 2181
页数：3
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