Mechanism of Pseudogap Detected by Electronic Raman Scattering: Phase Fluctuation or Hidden Order?

被引:2
|
作者
Lu Hong-Yan [1 ,2 ,3 ]
Wan Yuan [2 ,3 ]
He Xiang-Mei [2 ,3 ]
Wang Qiang-Hua [2 ,3 ]
机构
[1] Huaibei Coal Ind Teachers Coll, Dept Phys, Huaibei 235000, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-DENSITY-WAVE; GAP; SUPERCONDUCTORS; SPECTRA; TC;
D O I
10.1088/0256-307X/26/9/097402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the electronic Raman scattering in the cuprates to distinguish the two possible scenarios of the pseudogap normal state. In one scenario, the pseudogap is assumed to be caused by phase fluctuations of the preformed Cooper pairs. We find that pair-breaking peaks appear in both the B-1g and B-2g Raman channels, and they are smeared and tend to shift to the same energy with the increasing strength of phase fluctuations. Thus both channels reflect the same pairing energy scale, irrespectively of the doping level. In another scenario, the pseudogap is assumed to be caused by a hidden order that competes with the superconducting order. As an example, we assume that the hidden order is the d-density-wave (DDW) order. We find analytically and numerically that in the DDW normal state there is no Raman peak in the B-2g. channel in a tight-binding model up to the second nearest-neighbor hopping, while the Raman peak in the B-1g channel reflects the energy gap caused by the DDW order. This behavior is in agreement with experiments in the pseudogap normal state. To gain further insights, we also calculate the Raman spectra in the DDW+SC state. We study the doping and temperature dependence of the peak energy in both channels and find a two-gap behavior, which is in agreement with recent Raman experiments. Therefore, our results shed light on the hidden order scenario for the pseudogap.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
    Siegle, H
    Kaschner, A
    Hoffmann, A
    Broser, I
    Thomsen, C
    Einfeldt, S
    Hommel, D
    PHYSICAL REVIEW B, 1998, 58 (20): : 13619 - 13626
  • [2] Observation of Electronic Structure Modification in the Hidden Order Phase of CeCoSi
    Kimura, Shin-ichi
    Watanabe, Hiroshi
    Tatsukawa, Shingo
    Tanida, Hiroshi
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2023, 92 (04)
  • [3] THE PAIRING MECHANISM IN HTSC INVESTIGATED BY ELECTRONIC RAMAN-SCATTERING
    HOFFMANN, A
    LEMMENS, P
    WINKELER, L
    GUNTHERODT, G
    JOURNAL OF LOW TEMPERATURE PHYSICS, 1995, 99 (3-4) : 201 - 203
  • [4] ELECTRONIC MECHANISM OF THE SURFACE-ENHANCED RAMAN-SCATTERING
    NAKAI, H
    NAKATSUJI, H
    JOURNAL OF CHEMICAL PHYSICS, 1995, 103 (06): : 2286 - 2294
  • [5] Electronic Raman scattering and the second-order Raman spectra of the n-type SiC
    Han Ru
    Yang Yin-Tang
    Chai Chang-Chun
    ACTA PHYSICA SINICA, 2008, 57 (05) : 3182 - 3187
  • [6] Electronic Raman scattering and the second-order Raman spectra of the n-type SiC
    Han, Ru
    Yang, Yin-Tang
    Chai, Chang-Chun
    Wuli Xuebao/Acta Physica Sinica, 2008, 57 (05): : 3182 - 3187
  • [7] Electronic Raman scattering and phonon self-energy effects in the R-123 system:: Signatures of gap and pseudogap
    Bock, A
    ANNALEN DER PHYSIK, 1999, 8 (06) : 441 - 486
  • [8] Electronic Raman scattering in copper oxide superconductors: Understanding the phase diagram
    Sacuto, Alain
    Gallais, Yann
    Cazayous, Maximilien
    Blanc, Sebastien
    Measson, Marie-Aude
    Wen, Jinsheng
    Xu, Zhijin
    Gu, Genda
    Colson, Dorothee
    COMPTES RENDUS PHYSIQUE, 2011, 12 (5-6) : 480 - 501
  • [9] HIGH-ORDER STIMULATED ELECTRONIC RAMAN-SCATTERING FROM LITHIUM VAPOR
    CHEN, FZ
    HAN, XF
    WU, CYR
    APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1993, 56 (02): : 113 - 117
  • [10] Three energy scales in the superconducting state of hole-doped cuprates detected by electronic Raman scattering
    Benhabib, S.
    Gallais, Y.
    Cazayous, M.
    Measson, M-A.
    Zhong, R. D.
    Schneeloch, J.
    Forget, A.
    Gu, G. D.
    Colson, D.
    Sacuto, A.
    PHYSICAL REVIEW B, 2015, 92 (13)